Details

Autor(en) / Beteiligte

• Nogami, T.
• Zhang, X.
• Kelly, J.
• Briggs, B.
• You, H.
• Patlolla, R.
• Huang, H.
• McLaughlin, P.
• Lee, J.
• Shobha, H.
• Nguyen, S.
• DeVries, S.
• Demarest, J.
• Lian, G.
• Li, J.
• Maniscalco, J.
• Bhosale, P.
• Lin, X.
• Peethala, B.
• Lanzillo, N.
• Kane, T.
• Yang, C. C.
• Motoyama, K.
• Sil, D.
• Spooner, T.
• Canaperi, D.
• Standaert, T.
• Lian, S.
• Grill, A.
• Edelstein, D.
• Paruchuri, V.

Titel

Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node

Ist Teil von

• 2017 Symposium on VLSI Technology, 2017, p.T148-T149

Ort / Verlag

JSAP

Erscheinungsjahr

2017

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-forming barrier (tCoSFB) [1]. Line-R vs. linewidth of Cu fine wires with TaN/Ru barrier crosses over with barrier-less Ru and Co wires for beyond-7 nm node dimensions, whereas Cu with tCoSFB remains competitive, with the lowest line R for 7 nm and beyond. Our study suggests promise of this last scheme to meet requirements in line R and EM reliability.