Details

Autor(en) / Beteiligte

• Daechul Jeong
• Kyunghoon Moon
• Seokwon Lee
• Byungjoon Park
• Jihoon Kim
• Juho Son
• Bumman Kim

Titel

Linear CMOS power amplifier at Ka-band with ultra-wide video bandwidth

Ist Teil von

• 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2017, p.220-223

Ort / Verlag

IEEE

Erscheinungsjahr

2017

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A highly linear power amplifier (PA) with ultra-wide video bandwidth is designed at a Ka-band for 5G application. To get a high linearity with high efficiency, a deep class-AB topology with 2 nd harmonic control circuits is employed, reducing the 3 rd order nonlinearity. Further, an efficient low-drop out (LDO) regulator is proposed to suppress the memory effect generated by the envelope and fundamental nonlinear mixing. The PA, composed of 3 cascaded common-source (CS) stages, achieves peak PAE of 21.8% at output power of 14 dBm with 22 dB gain. The 3 rd order inter-modulation distortion (IMD3) at an output power of 5 dBm is under -30 dBc for a video bandwidth of 1 GHz. The PA and LDO are fabricated in a 65 nm CMOS process and occupy 0.53 mm 2 .