Details

Autor(en) / Beteiligte

• Yang, C.-C
• Spooner, T.
• McLaughlin, P.
• Hu, C. K.
• Huang, H.
• Mignot, Y.
• Ali, M.
• Lian, G.
• Quon, R.
• Standaert, T.
• Edelstein, D.

Titel

Microstructure modulation for resistance reduction in copper interconnects

Ist Teil von

• 2017 IEEE International Interconnect Technology Conference (IITC), 2017, p.1-3

Ort / Verlag

IEEE

Erscheinungsjahr

2017

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Microstructure variation with post-patterning dielectric aspect ratio (AR) and post-plating annealing temperature has been investigated in Cu narrow wires. As compared to the conventional annealing at 100 °C for a feature AR of 2.6, both elevated temperature anneals and reduced AR structures modulated Cu microstructure, which then resulted in a reduced rate of electrical resistivity increase with area scaling and an increased electromigration resistance in the Cu narrow wires.