Details

Autor(en) / Beteiligte

• Sanchez-Martin, H.
• Garcia-Perez, O.
• Iniguez-de-la-Torre, I.
• Perez, S.
• Mateos, J.
• Gonzalez, T.
• Gaquiere, C.

Titel

Geometry and bias dependence of trapping effects in planar GaN nanodiodes

Ist Teil von

• 2017 Spanish Conference on Electron Devices (CDE), 2017, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2017

Link zum Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.