Details

Autor(en) / Beteiligte

• Shengling Deng
• Hossain, Zia
• Taniguchi, Toshimitsu

Titel

Detailed Study on Dynamic Characteristics of a High-Performance SGT-MOSFET With Under-the-Trench Floating P-Pillar

Ist Teil von

• IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.735-740

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2017

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We proposed a 150 V shielded-gate trench (SGT) power MOSFET with floating P-pillars under the trench and studied its static and dynamic characteristics, especially the transient capacitance and dynamic R ds(on) at high switching frequency. TCAD simulation demonstrated over 33% R ds(on) reduction compared with regular SGT-MOSFET. Up to MHz switching frequency, simulation indicates almost no R ds(on) increase in this device, meaning negligible dynamic R ds(on) penalty. On the other hand, elevated Coss is observed within a particular Vds range (40-90 V) as switching frequency increases, which translates to Qoss penalty. We investigated the underlying physical process for this Qoss change, and attributed it to the hole pilings in the undepleted region of the P-pillar. The overall parameters of this device, including R ds(on) and R ds(on) *Q oss , are superior to regular SGT-MOSFET and are close to superjunction MOSFET, which is more expensive and challenging in manufacturing. Although a 150 V MOSFET is used as our study vehicle, the analyses and conclusions apply to any power devices that employ the proposed device architecture.