Details

Autor(en) / Beteiligte

• De Franceschi, S.
• Hutin, L.
• Maurand, R.
• Bourdet, L.
• Bohuslavskyi, H.
• Corna, A.
• Kotekar-Patil, D.
• Barraud, S.
• Jehl, X.
• Niquet, Y.-M
• Sanquer, M.
• Vinet, M.

Titel

SOI technology for quantum information processing

Ist Teil von

• 2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.13.4.1-13.4.4

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE

Beschreibungen/Notizen

• We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology.