Details

Autor(en) / Beteiligte

• Fenouillet-Beranger, C.
• Acosta-Alba, P.
• Mathieu, B.
• Kerdiles, S.
• Samson, M-P
• Previtali, B.
• Rambal, N.
• Lapras, V.
• Ibars, F.
• Roman, A.
• Kachtouli, R.
• Besson, P.
• Nieto, J-P
• Pasini, L.
• Brunet, L.
• Aussenac, F.
• Hartmann, J-M
• Mazzamuto, F.
• Toque-Tresonne, I.
• Huet, K.
• Batude, P.
• Vinet, M.

Titel

Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration

Ist Teil von

• 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this paper, the energy process window of nanosecond (ns) laser annealing for junctions activation has been determined for several dopants (As, P, BF 2 ). The different recrystallization states observed when tuning laser energy density are explained by numerical simulations. Within these conditions, the laser impact on the thermal stability of ULK/copper inter-tiers interconnections has been evaluated for a 28nm node backend metal 1 design rules technology both from morphological and electrical perspectives. This study highlights the interest of ns laser anneal for CoolCube™ 3D integration.