Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016, p.1-3
Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding
Ist Teil von
2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016, p.1-3
Ort / Verlag
IEICE
Erscheinungsjahr
2016
Quelle
IEEE Electronic Library (IEL)
Beschreibungen/Notizen
We have successfully obtained 2-inch mirror like surface InP/Si wafer by using direct bonding. GaInAsP-InP double-hetero structure laser was grown on InP/Si substrate by MOVPE. Low temperature lasing was attained and show their characteristics.