2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016, p.1-3
2016
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Low temperature lasing characteristics of GaInAsP double-hetero laser integrated on InP/Si substrate using direct wafer bonding
- Ist Teil von
- 2016 21st OptoElectronics and Communications Conference (OECC) held jointly with 2016 International Conference on Photonics in Switching (PS), 2016, p.1-3
- Ort / Verlag
- IEICE
- Erscheinungsjahr
- 2016
- Quelle
- IEEE Electronic Library (IEL)
- Beschreibungen/Notizen
- We have successfully obtained 2-inch mirror like surface InP/Si wafer by using direct bonding. GaInAsP-InP double-hetero structure laser was grown on InP/Si substrate by MOVPE. Low temperature lasing was attained and show their characteristics.
- Sprache
- Englisch
- Identifikatoren
- Titel-ID: cdi_ieee_primary_7718365
- Format
- –
- Schlagworte
- direct wafer bonding, Epitaxial growth, III-V semiconductor materials, Indium phosphide, InP, laser, MOVPE, Si photonics, Silicon, Substrates, Surface emitting lasers