Details

Autor(en) / Beteiligte

• Vasen, T.
• Ramvall, P.
• Afzalian, A.
• Thelander, C.
• Dick, K. A.
• Holland, M.
• Doornbos, G.
• Wang, S. W.
• Oxland, R.
• Vellianitis, G.
• van Dal, M. J. H.
• Duriez, B.
• Ramirez, J.-R
• Droopad, R.
• Wernersson, L.-E
• Samuelson, L.
• Chen, T.-K
• Yeo, Y.-C
• Passlack, M.

Titel

InAs nanowire GAA n-MOSFETs with 12-15 nm diameter

Ist Teil von

• 2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• InAs nanowires (NW) grown by MOCVD with diameter d as small as 10 nm and gate-all-around (GAA) MOSFETs with d = 12-15 nm are demonstrated. I on = 314 μA/μm, and S sat =68 mV/dec was achieved at V dd = 0.5 V (I off = 0.1 μA/μm). Highest g m measured is 2693 μS/μm. Device performance is enabled by small diameter and optimized high-k/InAs gate stack process. Device performance tradeoffs between g m , R on , and I min are discussed.