Details

Autor(en) / Beteiligte

• Ni, C.-N
• Rao, K. V.
• Khaja, F.
• Sharma, S.
• Tang, S.
• Chen, J. J.
• Hollar, K. E.
• Breil, N.
• Li, X.
• Jin, M.
• Lazik, C.
• Lee, J.
• Maynard, H.
• Variam, N.
• Mayur, A. J.
• Kim, S.
• Chung, H.
• Chudzik, M.
• Hung, R.
• Yoshida, N.
• Kim, N.

Titel

Ultra-low NMOS contact resistivity using a novel plasma-based DSS implant and laser anneal for post 7 nm nodes

Ist Teil von

• 2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Link zum Volltext

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• We report a record-setting low NMOS contact resistivity of 1.2×10 -9 Ωcm 2 compatible with Ti/Si system and dopant segregation Schottky (DSS) based solution. The ultra-low contact resistivity of Ti/Si system is demonstrated with Highly Doped Si:P Epi layer and P implantation using conformal plasma implant followed by millisecond laser anneal. Additionally, we show that short-pulse nanosecond laser as post implant anneal provides a promising pathway to further improve NMOS ρ C to below 1×10 -9 Ωcm 2 for the post 7 nm nodes.