Details

Autor(en) / Beteiligte

• Hutin, L.
• Maurand, R.
• Kotekar-Patil, D.
• Corna, A.
• Bohuslavskyi, H.
• Jehl, X.
• Barraud, S.
• De Franceschi, S.
• Sanquer, M.
• Vinet, M.

Titel

Si CMOS platform for quantum information processing

Ist Teil von

• 2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Link zum Volltext

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We report the first quantum bit (qubit) device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot (QD) defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. By demonstrating qubit functionality in a conventional transistor-like layout and process flow, this result bears relevance for the future up-scaling of qubit architectures, including the opportunity of their co-integration with "classical" Si CMOS control circuitry.