Details

Autor(en) / Beteiligte

• Fu-Ju Hou
• Po-Jung Sung
• Fu-Kuo Hsueh
• Chien-Ting Wu
• Yao-Jen Lee
• Yiming Li
• Samukawa, Seiji
• Tuo-Hung Hou

Titel

Suspended Diamond-Shaped Nanowire With Four Facets for High-Performance Ge Gate-All-Around FETs

Ist Teil von

• IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3837-3843

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2016

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A feasible pathway to scale germanium (Ge) FETs in future technology nodes has been proposed using the tunable diamond-shaped Ge nanowire (NW). The Ge NW was obtained through a simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The different etching selectivity of surface orientations for Cl 2 and HBr was employed for the three-step isotropic/anisotropic/isotropic dry etching. The ratio of Cl 2 and HBr, mask width, and Ge recess depth were crucial for forming the nearly defect-free suspended Ge channel through effective removal of dislocations near the Si/Ge interface. This technique could also be applied for forming diamond-shaped Si NWs. The suspended diamond-shaped NW gate-all-around NWFETs feature excellent electrostatics, the favorable {111} surfaces along the (110) direction with high carrier mobility, and the nearly defect-free Ge channel. The pFET with a high I ON /I OFF ratio of 6 × 107 and promising nFET performance have been demonstrated successfully.