2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, p.1-3
2016
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- Autor(en) / Beteiligte
- Titel
- Highly linear CMOS power amplifier for mm-wave applications
- Ist Teil von
- 2016 IEEE MTT-S International Microwave Symposium (IMS), 2016, p.1-3
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2016
- Quelle
- IEL
- Beschreibungen/Notizen
- Fully-integrated highly linear Ka-band differential power amplifiers (PA) are designed in 28-nm CMOS process. A Class-AB topology is used to increase the efficiency and linearity. For proper operation of the class-AB amplifier, harmonic control circuits are introduced to minimize the 2 nd harmonics at the drain and source of the transistor. By adopting this structure, the common source / 2-stack PAs achieve PAE of 27% / 25%, and EVM of 5.17% / 4.2% and ACLR E-UTRA of -33 dBc / -33 dBc, respectively, at an average output power of 9.5 dBm / 14.2 dBm at 28.5 GHz for a 20-MHz bandwidth, 64QAM, and 7.5-dB PAPR LTE signal.
- Sprache
- Englisch
- Identifikatoren
- DOI: 10.1109/MWSYM.2016.7540024Titel-ID: cdi_ieee_primary_7540024
- Format
- –
- Schlagworte
- class-AB, CMOS, CMOS integrated circuits, CMOS process, error vector magnitude (EVM), Gain, Harmonic analysis, harmonic control, intermodulation distortion (IMD), linearity, long-term evolution (LTE), Peak to average power ratio, power amplifier (PA), Power amplifiers, Power generation