Details

Autor(en) / Beteiligte

• Shen-Li Chen
• Yu-Ting Huang
• Yi-Cih Wu
• Jia-Ming Lin
• Chih-Hung Yang
• Chih-Ying Yen
• Kuei-Jyun Chen

Titel

ESD-reliability characterizations of a 45-V p-channel LDMOS-SCR with the discrete-cathode end

Ist Teil von

• 2016 International Conference on Applied System Innovation (ICASI), 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this paper, a TSMC 0.25-pm BCD process is used to evaluate the electrostatic discharge (ESD) protection robustness by modulating the cathode-side of an insetting SCR in the high-voltage (HV) p-channel lateral-diffused MOSFET (pLDMOS) device. The influences of ESD protection capability and latch-up (LU) immunity in these HV pLDMOS devices by the embedded SCR structures and cathode-side discrete distribution are investigated. It can be found that the holding voltage (V h ) value of the pLDMOS with a parasitic SCR "drain npn"-arranged type and thin-oxide definition (OD) discrete distribution in the cathode side has greatly increased with the parasitic SCR OD-number decreased, there is the best Vh value in the OD DIS_2 of 38.05 V. The trigger voltage (V t1 ) value and V h values of the pLDMOS with a parasitic SCR "drain pnp"-arranged type and OD discrete distribution in the cathode side slightly decreased with the discrete OD row number decreased, there is the best V h value in the OD DIS_91 of 28.85 V. However, the secondary breakdown current (I t2 ) values (ESD reliability robustness) are falling 1.8 A~2.4 A except for the OD DIS_3 and DIS_2, and its robustness of the "drain pnp"-arranged type and the "drain npn"-arranged type with the discrete cathode are greater than the corresponding pure pLDMOS-SCR stripe pure device especially in the "drain pnp"-arranged type.