Details

Autor(en) / Beteiligte

• Fukawa, Asuka
• Imanishi, Kota
• Miyamura, Shogo
• Matsuda, Tokiyoshi
• Kimura, Mutsumi

Titel

Magnetoresistance effect of Ga-Sn-O thin-film device

Ist Teil von

• 2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2016, p.1-2

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We investigate MR effect of GTO thin-film devices. It is found positive and negative MR effects. Something dramatically changes in GTO thin-film devices. Moreover, it is suggested that the GTO thin-film devices with oxygen of high concentration indicate negative MR effect. This may be due to the generation of random potential and Anderson localization with oxygen. Finally, in the case of some special condition, extremely large MR effect is obtained. Further discussion is needed to clarify the mechanism of this large MR effect.