Details

Autor(en) / Beteiligte

• Guojun Liu

Titel

A fully integrated 0.18 μm SiGe BiCMOS power amplifier

Ist Teil von

• 2015 IEEE 11th International Conference on ASIC (ASICON), 2015, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• A fully integrated class AB power amplifier (PA) for 900MHz front end IC integration is presented. The PA is implemented in a two-stage single-ended structure and is designed in HHGrace 0.18μm SiGe BiCMOS process. This PA is designed in fully integrated style without any external on-board matching components, the designed results show that under 3.3V power supply and 28mA quiescent current, the PA can obtain 23.5dBm maximum output power at 900MHz, the output 1 dB compression point is 19.8dBm, the power added efficiency (PAE) at 1dB compression point is 25.7%, peak PAE is 33.7% and the S parameter results are as follows at 900MHz, S11 = -16.1dB, S21 =27.2dB, S12 = -49.8dB, S22 = -7.0dB.The PA is unconditionally stable. The power amplifier achieved predicted good impedance matching, output power, linearity, gain and power added efficiency with chip size 1.3 × 1.1 mm 2 (including pads).