Details

Autor(en) / Beteiligte

• Karanicolas, A.N.
• O, K.K.
• Wang, J.Y.A.
• Lee, H.-S.
• Reif, R.L.

Titel

A high-frequency fully differential BiCMOS operational amplifier

Ist Teil von

• IEEE journal of solid-state circuits, 1991-03, Vol.26 (3), p.203-208

Ort / Verlag

IEEE

Erscheinungsjahr

1991

Quelle

IEL

Beschreibungen/Notizen

• A high-frequency fully differential BiCMOS operational amplifier design for use in switched-capacitor circuits is presented. The operational amplifier is integrated in a 3.0-GHz, 2- mu m BiCMOS process with an active die area of 1.0 mm*1.2 mm. This BiCMOS op amp offers an infinite input resistance, a DC gain of 100 dB, a unity-gain frequency of 90 MHz with 45 degrees phase margin, and a slew rate of 150 V/ mu s. The differential output range is 12 V. The circuit is operated from a +or-5-V power supply and dissipates 125 mW. The op amp is unity-gain stable with 7 pF of capacitive loading at each output. The op amp is a two-stage, pole-split frequency compensated design that uses a PMOS input stage for infinite input resistance and an n-p-n bipolar second stage for high gain and high bandwidth. The frequency compensation network serves both the differential- and common-mode amplifiers so the differential- and common-mode amplifier dynamics are similar. A dynamic switched-capacitor common-mode feedback scheme is used to set the output common-mode level of the first and second stages.< >