Details

Autor(en) / Beteiligte

• North, A.
• Burroughes, J.
• Burke, T.
• Shields, A.
• Norman, C.E.
• Pepper, M.

Titel

The two-dimensional lateral injection in-plane laser

Ist Teil von

• IEEE journal of quantum electronics, 1999-03, Vol.35 (3), p.352-357

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

1999

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper, a two-dimensional (2-D) p-n junction was used for population inversion in a GaAs quantum-well laser. The device, incorporating modulation doping within the core of a separate confinement heterostructure, was designed to exploit the amphoteric behavior of silicon in GaAs [doping p-type on [311]A facets and n-type on [100]]. It is believed to be the first lasing device to use an amphoterically doped junction for population inversion. In the first attempted design (described here), CW lasing was achieved at temperatures up to 90 K. The factors affecting the temperature dependence of threshold are discussed in the context of possible design improvements. The device may eventually show improved modulation bandwidth over conventional vertical injection lasers with bulk contacts, since its geometry and the 2-D nature of the injection offer reduced capacitance, HEMT integration, and an elimination of carrier capture problems.