Details

Autor(en) / Beteiligte

• Ke Zeng
• Ye Jia
• Singisetti, Uttam

Titel

Interface State Density in Atomic Layer Deposited SiO2/ \beta -Ga2O3 ( \bar 01 ) MOSCAPs

Ist Teil von

• IEEE electron device letters, 2016-07, Vol.37 (7), p.906-909

Ort / Verlag

IEEE

Erscheinungsjahr

2016

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• The interface state density (D it ) at the interface between β-Ga 2 O 3 (2̅01) and atomic layer deposited (ALD) SiO 2 dielectric is extracted using Terman method and conductance method. The effect of the different surface treatments on the extracted D it was also studied. It is observed that the extracted D it of 6 × 10 11 cm -2 eV -1 for the sample with no surface treatment is lower than hydrofluoric and hydrochloric acid treated samples. Low D it sample shows narrow peak in the conductance method, suggesting a smooth interface. The extracted low D it makes ALD SiO 2 an attractive candidate for future Ga 2 O 3 power devices.