Details

Autor(en) / Beteiligte

• Thomas, Luc
• Jan, Guenole
• Son Le
• Yuan-Jen Lee
• Huanlong Liu
• Jian Zhu
• Serrano-Guisan, Santiago
• Ru-Ying Tong
• Keyu Pi
• Dongna Shen
• Renren He
• Haq, Jesmin
• Zhongjian Teng
• Annapragada, Rao
• Vinh Lam
• Yu-Jen Wang
• Zhong, Tom
• Torng, Terry
• Po-Kang Wang

Titel

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Ist Teil von

• 2015 IEEE International Electron Devices Meeting (IEDM), 2015, p.26.4.1-26.4.4

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ~30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ~30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level.