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This work presents a pass-type ultrawideband power detector MMICs designed for operation from 10 MHz to 50 GHz in a wide dynamic range from -40 dBm to +25 dBm which were fabricated using GaAs zero bias diode process. Directional and non-directional detector designes are reviwed. For good wideband matching with transmission line, bonding wires parameters were taken into account at the stage of MMIC design. Result of this work includes on-wafer measurements of MMICs S-parameters and transfer characteristics.