Details

Autor(en) / Beteiligte

• Reusch, David

Titel

High frequency eGaN monolithic half bridge IC based 12 VIN to 1 VOUT point of load converter

Ist Teil von

• 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2015, p.371-376

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Power converters are constantly trending towards higher efficiency, higher power density, higher switching frequency, and higher output current. Rapidly maturing gallium nitride (GaN) technology can meet these demands, and in this paper high performance 12 VIN to 1 VOUT eGaN monolithic half bridge IC based point-of-load (POL) buck converters will be demonstrated at output currents up to 40 A and switching frequencies up to 4 MHz.