Details

Autor(en) / Beteiligte

• Nazarova, Galina N.
• Elesin, Vadim V.
• Chukov, George V.
• Amburkin, Dmitry M.
• Nikiforov, Alexander Y.

Titel

Long-Term Transient Radiation Effects in SOI CMOS RF ICs

Ist Teil von

• 2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2015, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper presents the study of transient radiation effects in SOI CMOS RF IC's and discrete MOS transistors. Experiments show that the sensitivity of SOI RF IC's (gain blocks, mixers, VCO etc.) to transient irradiations (dose rate) is mainly determined by the transient response of RF characteristics i.e. output power, output frequency, power / conversion gain, rather than supply transient photocurrent. SOI VCO demonstrates a minimal threshold dose rate (upset-free level) below than 109 rad(Si)/s, limited by the output frequency variations of ±20% and recovery time up to 100 μs with a maximum dose rate of 5×1012 rad(Si)/s. It is also shown that the long-term transient recovery of the RF characteristics and super-linear dependence of the supply photocurrent vs dose rate are the dominating transient radiation effects in SOI CMOS RF IC's.