Details

Autor(en) / Beteiligte

• Bock, J.
• Aufinger, K.
• Boguth, S.
• Dahl, C.
• Knapp, H.
• Liebl, W.
• Manger, D.
• Meister, T. F.
• Pribil, A.
• Wursthorn, J.
• Lachner, R.
• Heinemann, B.
• Rucker, H.
• Fox, A.
• Barth, R.
• Fischer, G.
• Marschmeyer, S.
• Schmidt, D.
• Trusch, A.
• Wipf, C.

Titel

SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project

Ist Teil von

• 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, 2015, p.121-124

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with f T of 250 GHz and f max of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHṔs advanced SiGe HBT module with epitaxial base link for future industrial BiCMOS platforms is demonstrated by integrating it in Infineon's 130 nm process resulting in an f max of 500 GHz, 1.8 ps gate delay and a record 161 GHz static frequency divider. IHP has achieved an f max of 570 GHz for the first time using an HBT concept with non-selective epitaxial base deposition and an elevated extrinsic base.