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2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2015, p.183-186
Ort / Verlag
IEEE
Erscheinungsjahr
2015
Quelle
IEEE Xplore
Beschreibungen/Notizen
This paper proposes a new RF oscillator topology that is suitable for ultra-low voltage and power applications. By employing alternating current source transistors, the structure combines the benefits of low supply voltage operation of conventional NMOS cross-coupled oscillators together with high current efficiency of the complementary push-pull oscillators. In addition, the 1/f noise upconversion is also reduced. The 40nm CMOS prototype exhibits an average FoM of 189.5 dBc/Hz over 4-5 GHz tuning range, dissipating 0.5mW from 0.5V power supply, while abiding by the technology manufacturing rules.