Details

Autor(en) / Beteiligte

• Zhang, L.
• de Marneffe, J.-F
• Heylen, N.
• Murdoch, G.
• Tokei, Z.
• Boemmels, J.
• De Gendt, S.
• Baklanov, M. R.

Titel

Alternative integration of ultralow-k dielectrics by template replacement approach

Ist Teil von

• 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015, p.345-348

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Replacement of sacrificial template by ultralow-k dielectric was studied as an alternative integration approach for Cu/low-k interconnect. Metallization structure was first formed by patterning a template material. After template removal, a spin-on porous low-k was deposited on the metal lines. Then, planarization of the excess low-k was performed by CMP. The proposed approach does solve the two major challenges in conventional Cu/low-k damascene integration approach: low-k plasma damage and metal penetration during barrier deposition on porous structures.