Details

Autor(en) / Beteiligte

• Innocenti, J.
• Rivero, C.
• Julien, F.
• Portal, J. M.
• Hubert, Q.
• Bouton, G.
• Fornara, P.
• Lopez, L.
• Masson, P.
• Niel, S.
• Regnier, A.

Titel

NMOS drive current enhancement by reducing mechanical stress induced by Shallow Trench Isolation

Ist Teil von

• 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015, p.395-398

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This paper presents a new solution to reduce the mechanical stress impact of Shallow Trench Isolation (STI) by adding polysilicon in STI and thus, improve MOSFET performances. Indeed, when a polysilicon wall is used, the drive current of NMOS transistors used in analog and digital applications is 5% higher due to the reduction in the STI-induced, compressive stress in the channel. The polysilicon wall could be added automatically in digital standard cells during cad to mask operation without increasing the size of the cells. Finally, the speed frequency of CMOS inverter ring oscillators designed with low-voltage MOSFETs used in digital standard cells is increased by 6% when a polysilicon wall is added around NMOS transistors. Moreover, the static current of ring oscillators remains unchanged.