Details

Autor(en) / Beteiligte

• Donnelly, J.P.
• Walpole, J.N.
• Groves, S.H.
• Bailey, R.J.
• Missaggia, L.J.
• Napoleone, A.
• Reeder, R.E.
• Cook, C.C.

Titel

1.5-μm tapered-gain-region lasers with high-CW output powers

Ist Teil von

• IEEE photonics technology letters, 1998-10, Vol.10 (10), p.1377-1379

Ort / Verlag

IEEE

Erscheinungsjahr

1998

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• High-power diode lasers consisting of a a tapered region have waveguide section coupled to fabricated in 1.5-μm InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of >1 W with /spl ap/80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.