Details

Autor(en) / Beteiligte

• Ahmadi, Ali
• Ke Huang
• Nahar, Amit
• Orr, Bob
• Pas, Michael
• Carulli, John M.
• Makris, Yiorgos

Titel

Yield prognosis for fab-to-fab product migration

Ist Teil von

• 2015 IEEE 33rd VLSI Test Symposium (VTS), 2015, p.1-6

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We investigate the utility of correlations between e-test and probe test measurements in predicting yield. Specifically, we first examine whether statistical methods can accurately predict parametric probe test yield as a function of e-test measurements within the same fab. Then, we investigate whether the e-test profile of a destination fab, in conjunction with the e-test and probe test profiles of a source fab, suffice for accurate yield prognosis during fab-to-fab product migration. Results using an industrial dataset of ~3.5M devices from a 65nm Texas Instruments RF transceiver design fabricated in two different fabs reveal that (i) within-fab yield prediction error is in the range of a few tenths of a percentile point, and (ii) fab-to-fab yield prediction error is in the range of half a percentile point.