Details

Autor(en) / Beteiligte

• Reusch, David
• Strydom, Johan
• Lidow, Alex

Titel

A new family of GaN transistors for highly efficient high frequency DC-DC converters

Ist Teil von

• 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 2015, p.1979-1985

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• In this paper we will discuss the latest developments in DC-DC converters, including major improvements in eGaN ® FETs with the latest generation devices and the introduction of a new family of monolithic half bridge ICs offering unmatched high frequency performance. The new family of eGaN FETs is keeping Moore's Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOSFET in high frequency power conversion.