Details

Autor(en) / Beteiligte

• Dae Seok Byeon
• Chi-Weon Yoon
• Hyun-Kook Park
• Yong-Kyu Lee
• Hyo-Jin Kwon
• Yeong-Taek Lee
• Ki-Sung Kim
• Yong-Yeon Joo
• In-Gyu Baek
• Young-Bae Kim
• Jeong-Dal Choi
• Kye-Hyun Kyung
• Jeong-Hyuk Choi

Titel

Disturbance-suppressed ReRAM write algorithm for high-capacity and high-performance memory

Ist Teil von

• 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2014, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2014

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this paper, the mechanism of write disturbance, a unique phenomenon in high density ReRAM, is experimentally identified and quantified using fabricated test array. Based on the analysis, disturbance-suppressed ReRAM write algorithm is proposed to prove the feasibility of future high-capacity and high-performance ReRAM memory for NAND applications. By appropriately controlling WL and BL bias, surge current that causes write disturbance is successfully suppressed so that the overall cell distribution was narrowed down by more than 70%.