Details

Autor(en) / Beteiligte

• Starchenko, E. I.
• Prokopenko, N. N.
• Budyakov, P. S.

Titel

The radiation-hardened voltage references on bipolar and JFET transistors

Ist Teil von

• 2015 IEEE 8th GCC Conference & Exhibition, 2015, p.1-4

Ort / Verlag

IEEE

Erscheinungsjahr

2015

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This article reviews the circuit methods for the construction of the temperature-stable voltage references with the use of base of npn-type and pJFET transistors. The new circuitry of the voltage references is suggested for BiFET technology which renders possible to create microelectronic products with the radiation hardness up to 1 Mrad and F=10 13 ÷ 10 14 n/cm 2 acceptable for many applications.