Details

Autor(en) / Beteiligte

• Wong, S.S.
• Ryu, C.
• Lee, H.
• Loke, A.L.S.
• Kwon, K.-W.
• Bhattacharya, S.
• Eaton, R.
• Faust, R.
• Mikkola, B.
• Mucha, J.
• Ormando, J.

Titel

Barrier/seed layer requirements for copper interconnects

Ist Teil von

• Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102), 1998, p.107-109

Ort / Verlag

IEEE

Erscheinungsjahr

1998

Quelle

IEEE

Beschreibungen/Notizen

• The microstructure of electroplated Cu is highly dependent on the characteristics of underlying barrier and seed layers. A smooth and strongly textured Cu seed layer is needed to promote the development of highly textured, large grains in the electroplated Cu film, even in damascene structures. This microstructure is desired for extended reliability.