Details

Autor(en) / Beteiligte

• Kar, G. S.
• Kim, W.
• Tahmasebi, T.
• Swerts, J.
• Mertens, S.
• Heylen, N.
• Min, T.

Titel

Co/Ni based p-MTJ stack for sub-20nm high density stand alone and high performance embedded memory application

Ist Teil von

• 2014 IEEE International Electron Devices Meeting, 2014, p.19.1.1-19.1.4

Ort / Verlag

IEEE

Erscheinungsjahr

2014

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Excellent tunnel magneto resistance (TMR) values of 143% at resistance-area products (RA) of 4.7 Ωμm 2 from 11nm thin Co/Ni based perpendicular magnetic tunnel junctions (p-MTJ) was achieved. Engineered wetting layer (WL), seed layer (SL) and the introduction of newly designed inner synthetic anti-ferromagnetic (iSAF) pinned layer in combination with ultra-smooth bottom electrode (roughness 0.5 Å) was yielded to vertically scaled 11nm thick Co/Ni p-MTJ stack with excellent magnetic properties. The introduction of iSAF layer demonstrates for the 1 st time the free layer offset field controllability (<; 100 Oe) of the spin-transfer-torque (STT) magnetic random access memory (MRAM) device down to 12 nm in diameter.