Details

Autor(en) / Beteiligte

• Tisch, U.
• Zamir, S.
• Rotschild, A.
• Moreno, K.
• Beckman, D.
• Harari, A.
• Weiser, I.S.K.
• Salzman, J.

Titel

Surface morphology of MOCVD-grown GaN on sapphire

Ist Teil von

• MELECON '98. 9th Mediterranean Electrotechnical Conference. Proceedings (Cat. No.98CH36056), 1998, Vol.2, p.1419-1422 vol.2

Ort / Verlag

IEEE

Erscheinungsjahr

1998

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Thin GaN layers on sapphire were grown by metal organic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction and photoluminescence. AFM and SEM studies show flat surfaces with pyramid-like and truncated pyramid-like hexagonal hillocks. Their inclined faces, which form low angles (4.5/spl deg/-10.5/spl deg/) with the (0001) plane, are smooth and continuous. They can be interpreted as high index {011~l} vicinal surfaces.