Details

Autor(en) / Beteiligte

• Thomas, Tomos
• Fuhrer, Markus
• Alvarez, Diego Alonso
• Ekins-Daukes, Ned
• Kian Hua Tan
• Wicaksono, Satrio
• Wan Khai Loke
• Soon Fatt Yoon
• Johnson, Andrew

Titel

GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures

Ist Teil von

• 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0550-0553

Ort / Verlag

IEEE

Erscheinungsjahr

2014

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Photovoltaic devices made from a dilute nitride material, GaAsNSb, with band-gap close to 1eV have been developed and characterised. Homojunction devices of n-on-p and p-on-n type as well as an n-on-p GaAs/GaNAsSb heterojunction have been grown by molecular beam epitaxy. Optical and electrical characteristics are reported and a one-dimensional drift-diffusion model of internal quantum efficiency is used to estimate minority carrier diffusion lengths. The GaAs/GaNAsSb heterostructure produced AM1.5G short-circuit current of 23.6 mA/cm 2 , open-circuit voltage of 0.44V and fill factor of 67%. The model suggests that this performance is limited by both diffusion length and surface recombination.