2014 IEEE International Reliability Physics Symposium, 2014, p.2B.2.1-2B.2.5
2014
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Details
- Autor(en) / Beteiligte
- Titel
- Bias dependence of muon-induced single event upsets in 28 nm static random access memories
- Ist Teil von
- 2014 IEEE International Reliability Physics Symposium, 2014, p.2B.2.1-2B.2.5
- Ort / Verlag
- IEEE
- Erscheinungsjahr
- 2014
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- Experiments performed at TRIUMF and the Rutherford Appleton ISIS facility demonstrate the bias dependence of muon-induced single event upsets in delidded 28 nm static random access memories. Increased probability for upset is observed for memories operating at reduced voltages. Fully packaged parts are shown to be suitable to screen for low-energy muon sensitivity.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 1541-7026eISSN: 1938-1891DOI: 10.1109/IRPS.2014.6860585Titel-ID: cdi_ieee_primary_6860585
- Format
- –
- Schlagworte
- Detectors, Mesons, muons, Protons, Random access memory, reliability, Sensitivity, single event upset, Single event upsets, static random access memories