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Superfluorescent 1.1 ps pulse-on-demand generation in InGaN laser
Ist Teil von
2013 Conference on Lasers & Electro-Optics Europe & International Quantum Electronics Conference CLEO EUROPE/IQEC, 2013, p.1-1
Ort / Verlag
IEEE
Erscheinungsjahr
2013
Quelle
IEEE/IET Electronic Library (IEL)
Beschreibungen/Notizen
A semiconductor laser diode producing ultra-short optical pulses in the blue-violet range will find numerous applications ranging from next-generation 3D optical data storage devices to bio-medical diagnostic methods. In this communication we report generation of solitary pulses of the width below 1.1 ps from a tandem-cavity InGaN/InGaN laser diodes operating in 415-425 nm wavelength range. Solitary pulses are produced in the pulse-on-demand mode within narrow transient region between amplified spontaneous emission (ASE) and Q-switched lasing (LAS). The pulses exhibit large jitter. This regime is achieved when high negative bias -20 V was applied to the central section of the device (saturable electroabsorber) while to end sections were pumped with 1 A current pulses.