IEEE electron device letters, 2014-05, Vol.35 (5), p.539-541
2014
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Details
- Autor(en) / Beteiligte
- Titel
- Flexible NAND-Like Organic Ferroelectric Memory Array
- Ist Teil von
- IEEE electron device letters, 2014-05, Vol.35 (5), p.539-541
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2014
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- We present a memory array of organic ferroelectric field-effect transistors (OFeFETs) on flexible substrates. The OFeFETs are connected serially, similar to the NAND architecture of flash memory, which offers the highest memory density of transistor memories. We demonstrate a reliable addressing scheme in this architecture, without the need for select or access transistors. As proof of principle, a 1 × 4 NAND-like string is fabricated and characterized. Retention up to one month and endurance up to 2500 cycles are shown. Read and write disturb measurements show that the memory array can potentially be scaled up to 8 kbits.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2014.2313029Titel-ID: cdi_ieee_primary_6781647
- Format
- –
- Schlagworte
- Applied sciences, Arrays, Design. Technologies. Operation analysis. Testing, Electronics, Exact sciences and technology, Ferroelectric, Integrated circuits, Integrated circuits by function (including memories and processors), Logic gates, Magnetic and optical mass memories, memory array, NAND, Nonvolatile memory, organic semiconductors, Plastics, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Storage and reproduction of information, Substrates, Switches, Transistors