Details

Autor(en) / Beteiligte

• Guang-Hua Duan
• Jany, Christophe
• Le Liepvre, Alban
• Accard, Alain
• Lamponi, Marco
• Make, Dalila
• Kaspar, Peter
• Levaufre, Guillaume
• Girard, Nils
• Lelarge, Francois
• Fedeli, Jean-Marc
• Descos, Antoine
• Ben Bakir, Badhise
• Messaoudene, Sonia
• Bordel, Damien
• Menezo, Sylvie
• de Valicourt, Guilhem
• Keyvaninia, Shahram
• Roelkens, Gunter
• Van Thourhout, Dries
• Thomson, David J.
• Gardes, Frederic Y.
• Reed, Graham T.

Titel

Hybrid III--V on Silicon Lasers for Photonic Integrated Circuits on Silicon

Ist Teil von

• IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.158-170

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2014

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This paper summarizes recent advances of integrated hybrid InP/SOI lasers and transmitters based on wafer bonding. At first the integration process of III-V materials on silicon is described. Then the paper reports on the results of single wavelength distributed Bragg reflector lasers with Bragg gratings etched on silicon waveguides. We then demonstrate that, thanks to the high-quality silicon bend waveguides, hybrid III-V/Si lasers with two integrated intra-cavity ring resonators can achieve a wide thermal tuning range, exceeding the C band, with a side mode suppression ratio higher than 40 dB. Moreover, a compact array waveguide grating on silicon is integrated with a hybrid III-V/Si gain section, creating a wavelength-selectable laser source with 5 wavelength channels spaced by 400 GHz. We further demonstrate an integrated transmitter with combined silicon modulators and tunable hybrid III-V/Si lasers. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.