IEEE transactions on computer-aided design of integrated circuits and systems, 1997-12, Vol.16 (12), p.1409-1417
1997
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- Autor(en) / Beteiligte
- Titel
- Analytical modeling of dual-gate HFET's
- Ist Teil von
- IEEE transactions on computer-aided design of integrated circuits and systems, 1997-12, Vol.16 (12), p.1409-1417
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 1997
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- A simple analytical dual-gate hetero-structure field-effect transistor (HFET) (DGHFET) model is presented. The advantage to using the presented expression is that they give simple analytic techniques for the analysis and calculation of the DGHFET I-V characteristics and small signal parameters. The dual-gate direct current (dc) and small signal behaviors under various bias conditions are investigated by analytical approach. It is shown that dual-gate configuration has much enhanced g/sub m//g/sub d/ and C/sub gs//C/sub dg/ ratios in contrast to its single-gate counterparts. Moreover, the accuracy of this model is verified by numerical calculations and experimental results.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0278-0070eISSN: 1937-4151DOI: 10.1109/43.664223Titel-ID: cdi_ieee_primary_664223
- Format
- –
- Schlagworte
- Analytical models, Applied sciences, Circuits, Electron devices, Electronics, Exact sciences and technology, HEMTs, Microwave devices, Microwave FETs, MODFETs, Physics, Research and development, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Signal analysis, Transistors