Details

Autor(en) / Beteiligte

• Vendier, O.
• Bond, S.W.
• Myunghee Lee
• Sungyung Jung
• Brooke, M.
• Jokerst, N.M.
• Leavitt, R.P.

Titel

Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect

Ist Teil von

• IEEE photonics technology letters, 1998-04, Vol.10 (4), p.606-608

Ort / Verlag

IEEE

Erscheinungsjahr

1998

Link zum Volltext

• IEEE_Xplore

Quelle

IEL

Beschreibungen/Notizen

• Optical interconnection through stacked silicon foundry complementary metal-oxide-semiconductor (CMOS) circuitry has been demonstrated at a data rate of over 40 Mb/s with an open eye diagram. The system consists of a 0.8-μm transmitter and receiver realized in foundry digital CMOS. The use of digital CMOS enables on-chip integration with more complex digital systems, such as a microprocessor. Two layers of these circuits were integrated with thin-film InP-based light emitting diodes and metal-semiconductor-metal photodetectors operating at 1.3 μm (to which the silicon is transparent) to enable vertical optical through-Si-communication between the stacked silicon circuits.