Details

Autor(en) / Beteiligte

• Aoki, M.
• Noshiro, H.
• Tsunoda, K.
• Iba, Y.
• Hatada, A.
• Nakabayashi, M.
• Takahashi, A.
• Yoshida, C.
• Yamazaki, Y.
• Takenaga, T.
• Sugii, T.

Titel

Novel highly scalable multi-level cell for STT-MRAM with stacked perpendicular MTJs

Ist Teil von

• 2013 Symposium on VLSI Technology, 2013, p.T134-T135

Ort / Verlag

IEEE

Erscheinungsjahr

2013

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• We fabricated a new scalable multi-level cell for spin transfer torque magnetoresistive random-access memory that consists of stacked perpendicular magnetic tunnel junctions (MTJs) with a diameter of 50nm using one step etching. The cell features series-connecting MTJs using perpendicular magnetic anisotropy at the CoFeB/MgO interface and a well controlled stray field from the pinned layers resulting in H shift ~0. The cell demonstrated four-level operation with low-voltage switching (<; 0.5 V).