Details

Autor(en) / Beteiligte

• Kim, Joung-Yeal
• Park, Su-Jin
• Kwon, Kee-Won
• Kong, Bai-Sun
• Choi, Joo-Sun
• Jun, Young-Hyun

Titel

CMOS Charge Pump With No Reversion Loss and Enhanced Drivability

Ist Teil von

• IEEE transactions on very large scale integration (VLSI) systems, 2014-06, Vol.22 (6), p.1441-1445

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2014

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• A CMOS charge pump adopting dual charge transfer switches and a transfer blocking technique is presented. Using these techniques, the proposed charge pump eliminates reversion loss and improves driving capability. A test chip is designed in a 46-nm CMOS process, whose evaluation results show that, with no loading current, the proposed CMOS charge pump achieves 9.1% improvement of voltage conversion ratio. They also show that the proposed charge pump provides up to 132% improvement on current driving capability, as compared with the conventional CMOS charge pumps.