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Three Fingerprints of Memristor
IEEE transactions on circuits and systems. I, Regular papers, 2013-11, Vol.60 (11), p.3008-3021
2013
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Details

Autor(en) / Beteiligte
Titel
Three Fingerprints of Memristor
Ist Teil von
  • IEEE transactions on circuits and systems. I, Regular papers, 2013-11, Vol.60 (11), p.3008-3021
Ort / Verlag
New York: IEEE
Erscheinungsjahr
2013
Quelle
IEEE Electronic Library (IEL)
Beschreibungen/Notizen
  • This paper illustrates that for a device to be a memristor it should exhibit three characteristic fingerprints: 1) When driven by a bipolar periodic signal the device must exhibit a "pinched hysteresis loop" in the voltage-current plane, assuming the response is periodic. 2) Starting from some critical frequency, the hysteresis lobe area should decrease monotonically as the excitation frequency increases, and 3) the pinched hysteresis loop should shrink to a single-valued function when the frequency tends to infinity. Examples of memristors exhibiting these three fingerprints, along with non-memristors exhibiting only a subset of these fingerprints are also presented. In addition, two different types of pinched hysteresis loops; the transversal (self-crossing) and the non-transversal (tangential) loops exhibited by memristors are also discussed with its identification criterion.
Sprache
Englisch
Identifikatoren
ISSN: 1549-8328
eISSN: 1558-0806
DOI: 10.1109/TCSI.2013.2256171
Titel-ID: cdi_ieee_primary_6549211

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