Details

Autor(en) / Beteiligte

• Yo-Hwan Koh
• Min-Rok Oh
• Jong-Wook Lee
• Ji-Woon Yang
• Won-Chang Lee
• Chan-Kwang Park
• Jae-Beom Park
• Yeon-Cheol Heo
• Kwang-Myung Rho
• Byung-Cheol Lee
• Myung-Jun Chung
• Min Huh
• Hyung-Suk Kim
• Kyung-Suk Choi
• Won-Chul Lee
• Jeong-Kug Lee
• Kwang-Ho Ahn
• Kyoung-Wook Park
• Jeong-Yun Yang
• Hyung-Ki Kim
• Dai-Hoon Lee
• In-Seok Hwang

Titel

1 Giga bit SOI DRAM with fully bulk compatible process and body-contacted SOI MOSFET structure

Ist Teil von

• International Electron Devices Meeting. IEDM Technical Digest, 1997, p.579-582

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• 1 Gbit SOI DRAM with a body-contacted (BC) SOI MOSFET structure is successfully realized for the first time. The fabricated 1G SOI DRAM has fully compatible process with 0.17 /spl mu/m bulk CMOS technology except for the isolation process. The key advantage of BC-SOI MOSFET is freedom from the floating-body effect, since the body-potential increase can be suppressed by the well contact through the remaining thin-silicon film beneath the field oxide. The BC-SOI structure has several advantages, such as relatively high isolation punchthrough voltage, high drain-to-source breakdown voltage compared with conventional thin-film SOI MOSFETs and small junction capacitance compared with bulk MOSFETs, resulting in high-speed circuit operation.