Details

Autor(en) / Beteiligte

• Lei Zhuang
• Lingjie Guo
• Chou, S.Y.

Titel

Room temperature silicon single-electron quantum-dot transistor switch

Ist Teil von

• International Electron Devices Meeting. IEDM Technical Digest, 1997, p.167-169

Ort / Verlag

IEEE

Erscheinungsjahr

1997

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 meV and the silicon dot size is about 12 nm.