Details

Autor(en) / Beteiligte

• Solazzi, F.
• Palego, C.
• Molinero, D.
• Farinelli, P.
• Colpo, S.
• Hwang, J. C. M.
• Margesin, B.
• Sorrentino, R.

Titel

High-power high-contrast RF MEMS capacitive switch

Ist Teil von

• 2012 7th European Microwave Integrated Circuit Conference, 2012, p.32-35

Ort / Verlag

IEEE

Erscheinungsjahr

2012

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This paper reports on the first RF MEMS capacitive switch with a capacitance ratio of 130 that is stable almost up to 3 W of RF power. From an RF point of view the device behaves as a shunt capacitive switch, but employs an ohmic contact between the movable membrane and a floating metal deposited on the dielectric-coated stationary electrode, which is used to provide a high and repeatable ON state capacitance. In addition strain-relief anchor springs guarantee almost stable performances at high temperature and high power.