Details

Autor(en) / Beteiligte

• Chee-Keong Tan
• Jing Zhang
• Xiao-Hang Li
• Guangyu Liu
• Tayo, B. O.
• Tansu, N.

Titel

First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters

Ist Teil von

• Journal of display technology, 2013-04, Vol.9 (4), p.272-279

Ort / Verlag

IEEE

Erscheinungsjahr

2013

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• The band structure of dilute-As GaNAs alloy with the As composition range from 0% to 12.5% is studied by using First-Principle density-functional calculation. Our analysis shows that the dilute-As GaNAs alloy exhibits the direct band gap properties. The dilute-As GaNAs alloy shows a band gap range from 3.645 eV down to 2.232 eV with As content varying from 0% to 12.5%, which covers the blue and green spectral regime. This finding indicates the alloy as a potential candidate for photonic devices applications. The bowing parameter of 14.5 eV ±0.5 eV is also obtained using line fitting with the First-Principle and experimental data. The effective masses for electrons and holes in dilute-As GaNAs alloy, as well as the split-off energy parameters, were also presented. Minimal interband Auger recombination is also suggested for the dilute-As GaNAs alloy attributing to the off-resonance condition for this process.