Details

Autor(en) / Beteiligte

• Anvesha, A.
• Baghini, M. S.

Titel

A Sub-1V 32nA Process, Voltage and Temperature Invariant Voltage Reference Circuit

Ist Teil von

• 2013 26th International Conference on VLSI Design and 2013 12th International Conference on Embedded Systems, 2013, p.136-141

Ort / Verlag

IEEE

Erscheinungsjahr

2013

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper presents a novel process, voltage and temperature (PVT) invariant voltage reference generator using subthreshold MOSFETS. The proposed circuit uses weighted average of PTAT and CTAT voltages at zero temperature co-efficient point. The proposed circuit has been designed and optimized in 180nm mixed-mode CMOS technology. Simulation results show that the output voltage of the proposed voltage reference generator varies by only ± 0.85% across process corners and temperature range of 0°C to 100°C. Temperature and power supply sensitivity of the reference voltage is 135ppm/°C and 0.54%/V, respectively. The proposed circuit consumes only 19 nW DC power and operates at supply voltages as low as 600 mV.